- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
21,578
In-stock
|
Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | ||||
|
|
11,841
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | |||
|
|
4,411
In-stock
|
Toshiba | MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V | 8 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 15.3 mOhms | - 1 V | 29.9 nC | Enhancement | |||
|
|
4,755
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET | +/- 10 V | SMD/SMT | CST3C-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 250 mA | 20 Ohms | - 1 V | Enhancement | ||||||
|
|
2,389
In-stock
|
Toshiba | MOSFET Small-signal MOSFET P-Channel | +/- 8 V | SMD/SMT | UFM-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 24.9 mOhms | - 1 V | 12.8 nC | Enhancement | ||||
|
|
8,392
In-stock
|
Toshiba | MOSFET Nch MOSFET | +/- 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 4 Ohms | - 1 V | 1.6 nC | Enhancement |
