- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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20,108
In-stock
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Toshiba | MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A | +/- 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 13.9 mOhms | - 1 V | 19.5 nC | Enhancement | ||||
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2,879
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF | 6 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 12 A | 61 mOhms | - 0.3 V to - 1 V | 37.6 nC | ||||
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9,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET Power MGMT switch | +/- 10 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 14 A | 6.5 mOhms | - 1 V | 47 nC | Enhancement | ||||
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6,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID -5.4A, VDSS -12V | +/- 6 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.4 A | 14 mOhms | - 1 V | 33 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET Vds=-12V Id=1.2A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 1.2 A | 160 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-12V Id=-4A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 38 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 12V 5.5A | 8 V | SMD/SMT | VS6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.5 A | 35 mOhms | Enhancement |
