- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
-
- 1.31 Ohms (1)
- 1.35 mOhms (1)
- 103 mOhms (1)
- 136 mOhms (1)
- 15.3 mOhms (1)
- 150 mOhms (2)
- 154 mOhms (1)
- 175 mOhms (1)
- 189 mOhms (1)
- 20 Ohms (1)
- 234 mOhms (1)
- 24.9 mOhms (1)
- 240 mOhms (1)
- 25.8 mOhms (1)
- 250 mOhms (1)
- 3.6 Ohms (1)
- 3.8 mOhms (1)
- 311 mOhms (1)
- 4 Ohms (2)
- 47.4 mOhms (1)
- 49 mOhms (1)
- 54 mOhms (1)
- 60 mOhms (1)
- 60.5 mOhms (1)
- 80 mOhms (1)
- 85 mOhms (1)
- 89.6 mOhms (1)
- 94 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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10,000
In-stock
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Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 36 A | 3.8 mOhms | 65 nC | Enhancement | ||||||
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21,578
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | ||||
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27,273
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 94 mOhms | - 0.3 V to - 1 V | 14.1 nC | ||||
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8,146
In-stock
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Toshiba | MOSFET Small Sig FET 1.5V Low RDS 250mOhm | CST3B-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 103 mOhms | ||||||||||
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4,553
In-stock
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Toshiba | MOSFET P-Ch FET RDS 33mohm IDSS -10uA VDS -20V | SMD/SMT | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 150 mOhms | Enhancement | ||||||||
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7,085
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 250 mOhms | - 0.3 V to - 1 V | 4.7 nC | ||||
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11,841
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | |||
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9,808
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 8 V | SMD/SMT | SOT-723-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 800 mA | 4 Ohms | - 300 mV | 1.6 nC | Enhancement | ||||
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4,411
In-stock
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Toshiba | MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V | 8 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 15.3 mOhms | - 1 V | 29.9 nC | Enhancement | |||
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6,000
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 150 mOhms | - 0.3 V to - 1 V | 10.4 nC | ||||
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4,755
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 10 V | SMD/SMT | CST3C-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 250 mA | 20 Ohms | - 1 V | Enhancement | ||||||
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2,389
In-stock
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Toshiba | MOSFET Small-signal MOSFET P-Channel | +/- 8 V | SMD/SMT | UFM-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 24.9 mOhms | - 1 V | 12.8 nC | Enhancement | ||||
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3,132
In-stock
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Toshiba | MOSFET P-Ch Small Signal 270pF -2A -20V 4.6nC | 8 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 311 mOhms | - 0.3 V to - 1 V | 4.6 nC | ||||
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1,513
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | 8 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 54 mOhms | - 0.3 V to - 1 V | 23.1 nC | ||||
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8,392
In-stock
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Toshiba | MOSFET Nch MOSFET | +/- 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 4 Ohms | - 1 V | 1.6 nC | Enhancement | |||
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4,930
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.4 A | 154 mOhms | - 0.3 V to - 1 V | 10.4 nC | ||||
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2,629
In-stock
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Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 89.6 mOhms | ||||||||
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12,443
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 8 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 3.6 Ohms | - 300 mV | 1.2 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch -20V FET 690pF -5A 2.2W | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 85 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET Single P-ch 20V 4.4A | UFM-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 25.8 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 60.5 mOhms | ||||||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=1.8A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.8 A | 136 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-800mA 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 80 mA | 234 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Small-Signal MOSFETs Single | 8 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1.31 Ohms | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET P-CH 20V, 7.3A | 12 V | SMD/SMT | PS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.2 A | 80 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-4A 3Pin | 8 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 60 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2.5A 6Pin | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 49 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2A 3Pin | 8 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 175 mOhms | Enhancement | |||||
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15
In-stock
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Toshiba | MOSFET Vds=-20V Id=-1.7A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 189 mOhms | Enhancement | |||||
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8,906
In-stock
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Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 1.35 mOhms | 182 nC | Enhancement |
