- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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550
In-stock
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Toshiba | MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 20 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 120 V | 179 A | 3.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||||
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GET PRICE |
7,200
In-stock
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Toshiba | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 20 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 120 V | 112 A | 5.8 mOhms | 2 V to 4 V | 69 nC | Enhancement | |||||
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244
In-stock
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Toshiba | MOSFET MOSFET NCh11ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 32 A | 11 mOhms | 2 V to 4 V | 34 nC | Enhancement | ||||
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250
In-stock
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Toshiba | MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 60 A | 11 mOhms | 2 V to 4 V | 34 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET NCh6.2ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 56 A | 6.2 mOhms | 2 V to 4 V | 69 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET NCh3.7ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 72 A | 3.7 mOhms | 2 V to 4 V | 130 nC | Enhancement | ||||
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189
In-stock
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Toshiba | MOSFET N-Ch 88A 140W FET 120V 3100pF 52nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 88 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 42 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement |