- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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In-stock
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Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS150V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 28 mOhms | 2 V to 4 V | 10.6 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 50 mOhms | 4 V | 7 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET UMOSVIII 150V 64mOhm (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 50 mOhms | 4 V | 7 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET N-ch 150V 18A 0.08 ohm | 20 V | SMD/SMT | TFP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 120 mOhms | Enhancement |
