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- Maximum Operating Temperature :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Vgs th - Gate-Source Threshold Voltage :
57 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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5,000
In-stock
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Toshiba | MOSFET N-Ch 60V 4180pF 60nC 160A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 1.9 mOhms | 1.5 V | 60 nC | Enhancement | |||||
|
|
4,984
In-stock
|
Toshiba | MOSFET N-Ch 60V 1440pF 27nC 79A 81W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 5.4 mOhms | 1.5 V | 22 nC | Enhancement | |||||
|
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1,112
In-stock
|
Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | SMD/SMT | DSOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 260 A | 1.29 mOhms | 91 nC | Enhancement | ||||||||
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1,438
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 1.9 mOhms | 2 V to 4 V | 72 nC | UMOSVIII | ||||
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4,090
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 85A 49nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 3.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | ||||
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|
4,017
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 55 A | 6.1 mOhms | 2 V to 4 V | 31 nC | Enhancement | ||||
|
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6,192
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 30V 53A 24nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 53 A | 16 mOhms | 4 V | 22 nC | Enhancement | ||||||
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7,337
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | ||||||
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3,238
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 4.8 mOhms | 2 V to 4 V | 38 nC | Enhancement | ||||
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2,285
In-stock
|
Toshiba | MOSFET N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 21 A | 18 mOhms | 2 V to 4 V | 12 nC | Enhancement | ||||||
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|
2,329
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 11 mOhms | 2 V to 4 V | 16 nC | Enhancement | ||||
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|
9,564
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | ||||
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1,144
In-stock
|
Toshiba | MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 54 mOhms | ||||||||||
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3,610
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 580 mOhms | 800 mV | 6 nC | Enhancement | ||||
|
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3,182
In-stock
|
Toshiba | MOSFET Small Signal Mosfet | 20 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 83.5 mOhms | 1.8 V | 7 nC | Enhancement | |||||
|
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629
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | ||||||
|
|
312
In-stock
|
Toshiba | MOSFET 60V N-Ch PWR FET 105A 110W 46nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 60 V | 105 A | 5.4 mOhms | 46 nC | |||||||||
|
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295
In-stock
|
Toshiba | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 58 A | 4.4 mOhms | 2 V to 4 V | 46 nC | Enhancement | |||||
|
|
9,228
In-stock
|
Toshiba | MOSFET Small-signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 8.1 Ohms | 1.1 V | 0.27 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Toshiba | MOSFET Small-signal Nch MOSFET ID:0.4A | 20 V | SMD/SMT | SOT-346-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | |||||
|
|
2,889
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 4.7 Ohms | 1.1 V | Enhancement | |||||||
|
|
316
In-stock
|
Toshiba | MOSFET MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.4 mOhms | 2 V to 4 V | 23 nC | Enhancement | |||||
|
|
104
In-stock
|
Toshiba | MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 1 mA | 1.9 mOhms | |||||||||
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|
72
In-stock
|
Toshiba | MOSFET N-Ch PWR FET 43A 53W 60V VDSS | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 60 V | 43 A | 15 mOhms | ||||||||||
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|
218
In-stock
|
Toshiba | MOSFET N-Ch 60V 1990pF 29nC 50A 34W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.1 mOhms | 1.5 V | 28.3 nC | Enhancement | ||||||
|
|
45
In-stock
|
Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 68A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 68 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | ||||||
|
|
47
In-stock
|
Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 106 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | ||||||
|
|
308
In-stock
|
Toshiba | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 14 Ohms | 29 nC | |||||||||
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|
2,000
In-stock
|
Toshiba | MOSFET N-Ch MOS 60A 60V 88W 2900pF 0.008 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 8 mOhms | ||||||||||
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|
2,000
In-stock
|
Toshiba | MOSFET N-Ch MOS 30A 60V 30W 1350pF 0.018 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms |
