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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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288
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Toshiba | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 22 A | 11.5 mOhms | 2 V to 4 V | 28 nC | Enhancement | ||||
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4,576
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Toshiba | MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 25 mOhms | 2 V to 4 V | 11 nC | Enhancement |
