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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TPN22006NH,LQ
1+
$0.880
10+
$0.682
100+
$0.440
1000+
$0.352
3000+
$0.297
RFQ
2,285
In-stock
Toshiba MOSFET N-Ch 60V 21A 18W UMOSVIII 710pF 12nC 20 V SMD/SMT TSON-Advance-8 Reel 1 Channel Si N-Channel 60 V 21 A 18 mOhms 2 V to 4 V 12 nC Enhancement
TPN3300ANH,LQ
1+
$0.940
10+
$0.728
100+
$0.470
1000+
$0.376
3000+
$0.317
RFQ
26
In-stock
Toshiba MOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nC 20 V SMD/SMT TSON-Advance-8 Reel 1 Channel Si N-Channel 100 V 21 A 28 mOhms 2 V to 4 V 11 nC Enhancement
TPCC8084LQ(O
VIEW
RFQ
Toshiba MOSFET N-Ch 33V FET 21A 32W 1900pF 27nC   SMD/SMT TSON-Advance-8 Reel 1 Channel Si N-Channel 33 V 21 A 9 mOhms   27 nC  
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