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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode
TK9A55DA(STA4,Q,M)
1+
$2.020
10+
$1.630
100+
$1.300
500+
$1.140
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RFQ
Toshiba MOSFET N-Ch MOS 8.5A 550V 40W 1050pF 0.86   Through Hole TO-220FP-3     1 Channel Si N-Channel 550 V 8.5 A 860 mOhms  
2SK3017(F)
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RFQ
Toshiba MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm 30 V Through Hole TO-3PN-3 - 55 C + 150 C 1 Channel Si N-Channel 900 V 8.5 A 1.25 Ohms Enhancement
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