- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,998
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID -2A, VDSS -30V | - 25 V to + 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 125 mOhms | - 2.2 V | 3.4 nC | Enhancement | |||
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8,146
In-stock
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Toshiba | MOSFET Small Sig FET 1.5V Low RDS 250mOhm | CST3B-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 103 mOhms | ||||||||||
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7,907
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V | - 20 V, + 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2 A | 240 mOhms | - 2 V | 8.3 nC | Enhancement | ||||
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2,121
In-stock
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Toshiba | MOSFET Vds=-30V Id=-2A 3Pin | +/- 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 225 mOhms | - 1.2 V | Enhancement | ||||
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3,132
In-stock
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Toshiba | MOSFET P-Ch Small Signal 270pF -2A -20V 4.6nC | 8 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 311 mOhms | - 0.3 V to - 1 V | 4.6 nC | ||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2A 3Pin | 8 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 175 mOhms | Enhancement |
