- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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VIEW | Toshiba | MOSFET MOSFET NCh6.2ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 56 A | 6.2 mOhms | 2 V to 4 V | 69 nC | Enhancement | ||||
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In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 6.8 mOhms | 2.3 V | 17 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET N-Ch 30V FET 56A 70W 6400pF 91nC | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 2.3 mOhms | 91 nC |
