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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK12E80W,S1X
1+
$3.300
10+
$2.650
100+
$2.410
250+
$2.180
RFQ
400
In-stock
Toshiba MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W 20 V Through Hole TO-220-3   + 150 C   1 Channel Si N-Channel 800 V 11.5 A 380 mOhms 3 V 23 nC Enhancement
TK12A80W,S4X
1+
$3.130
10+
$2.520
100+
$2.290
250+
$2.070
RFQ
400
In-stock
Toshiba MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W 20 V Through Hole TO-220SIS-3   + 150 C   1 Channel Si N-Channel 800 V 11.5 A 380 mOhms 3 V 23 nC Enhancement
TK10P60W,RVQ
1+
$2.760
10+
$2.220
100+
$1.780
250+
$1.690
2000+
$1.190
RFQ
1,201
In-stock
Toshiba MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 9.7 A 380 mOhms 2.7 V to 3.7 V 20 nC Enhancement
TK10E60W,S1VX
1+
$2.800
10+
$2.250
100+
$2.050
250+
$1.850
RFQ
97
In-stock
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 30 V Through Hole TO-220-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 9.7 A 380 mOhms 2.7 V to 3.7 V 20 nC Enhancement
TK10V60W,LVQ
2500+
$1.450
5000+
$1.330
VIEW
RFQ
Toshiba MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A   SMD/SMT DFN8x8-5     Reel 1 Channel Si N-Channel 600 V 9.7 A 380 mOhms      
TK13A65U(STA4,Q,M)
GET PRICE
RFQ
46,500
In-stock
Toshiba MOSFET N-Ch FET RDS .32Ohm Yfs 8.0s VDS 650V   SMD/SMT TO-220FP-3       1 Channel Si N-Channel 650 V 13 A 380 mOhms      
TK13J65U(F)
VIEW
RFQ
Toshiba MOSFET N-Ch MOS 13A 650V 170W 950pF 0.38   Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 380 mOhms   17 nC Enhancement
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