- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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1,182
In-stock
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Toshiba | MOSFET N-Ch 20V FET 6A 2.2W 630pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 38 mOhms | ||||||||
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VIEW | Toshiba | MOSFET Vds=-12V Id=-4A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 38 mOhms | Enhancement |
