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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK8Q65W,S1Q
1+
$1.560
10+
$1.260
100+
$1.000
500+
$0.882
RFQ
220
In-stock
Toshiba MOSFET Power MOSFET N-Channel 30 V Through Hole TO-251-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 7.8 A 550 mOhms 2.5 V 16 nC Enhancement
TK12A60D(STA4,Q,M)
2500+
$1.310
5000+
$1.230
10000+
$1.160
VIEW
RFQ
Toshiba MOSFET N-Ch MOS 12A 600V 45W 1800pF 0.55   Through Hole TO-220FP-3       1 Channel Si N-Channel 600 V 12 A 550 mOhms      
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