- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,948
In-stock
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Toshiba | MOSFET Small-signal FET 2.3A 30V 0.145Ohm | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 66 mOhms | 400 mV | Enhancement | |||||
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906
In-stock
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Toshiba | MOSFET N-Ch -40V FET 1650pF -5A 1.9W 20nC | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 5 A | 66 mOhms | 20 nC | ||||||||
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2,900
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 66 mOhms | 350 mV | 16.8 nC | Enhancement |
