- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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4,755
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 10 V | SMD/SMT | CST3C-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 250 mA | 20 Ohms | - 1 V | Enhancement | ||||||
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2,105
In-stock
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Toshiba | MOSFET 50V VDS 7V VGSS 100mA ID 150mW | 7 V | SMD/SMT | SC-70-3 | Reel | 1 Channel | Si | N-Channel | 50 V | 100 mA | 20 Ohms | ||||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm | 30 V | SMD/SMT | PW-Mold-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 1 A | 20 Ohms | Enhancement |