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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge
SSM3K37MFV,L3F
1+
$0.290
10+
$0.194
100+
$0.081
1000+
$0.055
8000+
$0.036
RFQ
14,568
In-stock
Toshiba MOSFET Small-signal FET 0.25A 20V 12pF     SOT-723-3     Reel 1 Channel Si N-Channel 20 V 250 mA 2.2 Ohms  
TK4A60DB(STA4,Q,M)
1+
$1.390
10+
$1.120
100+
$0.860
500+
$0.760
RFQ
67
In-stock
Toshiba MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm   Through Hole TO-220FP-3       1 Channel Si N-Channel 600 V 3.7 A 2.2 Ohms  
TK4P60DA(T6RSS-Q)
2000+
$0.494
4000+
$0.485
10000+
$0.476
24000+
$0.441
VIEW
RFQ
Toshiba MOSFET N-Ch MOS 3.5A 600V 80W 490pF 2.2   SMD/SMT TO-252-3     Reel 1 Channel Si N-Channel 600 V 3.5 A 2.2 Ohms  
2SK3742(Q,M)
VIEW
RFQ
Toshiba MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 5 A 2.2 Ohms 25 nC
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