- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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23,187
In-stock
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Toshiba | MOSFET Small-signal FET 0.5A 20V 46pF 1.52 | 10 V | SMD/SMT | SOT-723-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 500 mA | 460 mOhms | 350 mV | 1.23 nC | Enhancement | ||||
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8,397
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 200 mA | 5.6 Ohms | 350 mV | Enhancement | ||||
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2,900
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 66 mOhms | 350 mV | 16.8 nC | Enhancement | |||
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631
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | CST3C-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 250 mA | 9 Ohms | 350 mV | 340 pC | Enhancement | |||
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2,787
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 10 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 500 mA | 1.52 Ohms | 350 mV | 1.23 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 118 mOhms | 350 mV | 10.8 nC | Enhancement |
