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- Rds On - Drain-Source Resistance :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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44
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 80A 103W 37nC | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 8.4 mOhms | 37 nC | |||||||
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556,120
In-stock
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Toshiba | MOSFET MOSFET NCh 6.9ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 80 V | 46 A | 6.9 mOhms | 2 V to 4 V | 37 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch 30V FET 27A 39W 2600pF 37nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 5.9 mOhms | 37 nC |
