- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,973
In-stock
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Toshiba | MOSFET N-CH Mosfet 60V | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 100 V | 92 A | 3.7 mOhms | 2 V | 58 nC | Enhancement | ||||
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19,440
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 93 A | 3.7 mOhms | 2 V to 4 V | 58 nC | UMOSVIII | ||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET P-Ch -30V FET 27W -20A 2260pF 58nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 12.4 mOhms | 58 nC |
