- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,285
In-stock
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Toshiba | MOSFET N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 21 A | 18 mOhms | 2 V to 4 V | 12 nC | Enhancement | |||||||
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615
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | |||||
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387
In-stock
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Toshiba | MOSFET N-Ch MOS 7A 500V 35W 600pF 1.22 | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 7 A | 1 Ohms | 4.4 V | 12 nC | |||||||
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78
In-stock
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Toshiba | MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | DTMOSIV | |||||
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121
In-stock
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Toshiba | MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | ||||||
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782
In-stock
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Toshiba | MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 2.5 A | 5.6 Ohms | 12 nC |