- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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10,000
In-stock
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Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 36 A | 3.8 mOhms | 65 nC | Enhancement | ||||||
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13,561
In-stock
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Toshiba | MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 144 mOhms | ||||||||
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18,176
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 390 mOhms | 850 mV | 1.1 nC | Enhancement | ||||
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14,627
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 290 mOhms | ||||||||
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6,948
In-stock
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Toshiba | MOSFET Small-signal FET 2.3A 30V 0.145Ohm | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 66 mOhms | 400 mV | Enhancement | |||||
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4,840
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 1.8 A | 400 mOhms | 500 mV | 1.1 nC | Enhancement | ||||
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2,803
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 12 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 23.8 mOhms | 500 mV | 9.4 nC | Enhancement | |||
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1,127
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 109 mOhms | 0.4 V to 1 V | 2.2 nC | ||||||
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2,193
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET Id 3.5A 20V 12VGSS | 12 V | SMD/SMT | TSM-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 70 mOhms | 1 V | 4.8 nC | ||||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.2A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.2 A | 95 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=20V Id=500mA 4Pin | 12 V | SMD/SMT | CST-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 500 mA | 205 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET P-CH 20V, 7.3A | 12 V | SMD/SMT | PS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.2 A | 80 mOhms | Enhancement | |||||
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15
In-stock
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Toshiba | MOSFET Vds=-20V Id=-1.7A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 189 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=20V Id=3A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3 A | 70 mOhms | Enhancement | |||||
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8,906
In-stock
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Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 1.35 mOhms | 182 nC | Enhancement |