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- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 8.4 mOhms (1)
- 8.5 mOhms (3)
- 9.5 mOhms (1)
- 90 mOhms (1)
- 92 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
50 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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378
In-stock
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Toshiba | MOSFET N-Ch 800V 2050pF 32nC 17A 180W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 3 V | 32 nC | Enhancement | |||||
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400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||
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397
In-stock
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Toshiba | MOSFET N-Ch 800V 700pF 13nC 6.5A 110W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 795 mOhms | 3 V | 13 nC | Enhancement | |||||
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550
In-stock
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Toshiba | MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 20 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 120 V | 179 A | 3.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||||
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108
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 207 A | 3.4 mOhms | 140 nC | |||||||
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49
In-stock
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Toshiba | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | ||||
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390
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 60A 67W 23nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 60 A | 10.4 mOhms | 23 nC | ||||||||
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435
In-stock
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Toshiba | MOSFET N-Ch PWR FET 75A 103W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 9.5 mOhms | ||||||||
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509
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 148 A | 4 mOhms | 81 nC | |||||
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323
In-stock
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Toshiba | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 300 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | ||||
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48
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7.7 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | ||||
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312
In-stock
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Toshiba | MOSFET 60V N-Ch PWR FET 105A 110W 46nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 60 V | 105 A | 5.4 mOhms | 46 nC | ||||||||
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20,000
In-stock
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Toshiba | MOSFET 40V N0Ch PWR FET 90A 126W 3000pF | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 40 V | 90 A | 8.2 mOhms | |||||||||
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177
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 105 mOhms | 2.5 V | 40 nC | Enhancement | |||
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150
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 157A 192W 81nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 80 V | 157 A | 4.3 mOhms | 81 nC | ||||||||
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GET PRICE |
7,200
In-stock
|
Toshiba | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 20 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 120 V | 112 A | 5.8 mOhms | 2 V to 4 V | 69 nC | Enhancement | |||||
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97
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 380 mOhms | 2.7 V to 3.7 V | 20 nC | Enhancement | |||
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194
In-stock
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Toshiba | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 52 A | 13.8 mOhms | ||||||||
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25,000
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | |||
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104
In-stock
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Toshiba | MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 1 mA | 1.9 mOhms | ||||||||
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70
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | ||||
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72
In-stock
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Toshiba | MOSFET N-Ch PWR FET 43A 53W 60V VDSS | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 60 V | 43 A | 15 mOhms | |||||||||
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308
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 55A 72W 25nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 80 V | 55 A | 12.2 mOhms | 25 nC | ||||||||
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31
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 128 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement | |||||
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45
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | |||
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116
In-stock
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Toshiba | MOSFET N-Ch MOS 13A 250V 102W 1100pF 0.25 | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 250 V | 13 A | 250 mOhms | ||||||||||
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47
In-stock
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Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 106 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | |||||
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308
In-stock
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Toshiba | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 14 Ohms | 29 nC | ||||||||
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250
In-stock
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Toshiba | MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 60 A | 11 mOhms | 2 V to 4 V | 34 nC | Enhancement | |||
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230
In-stock
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Toshiba | MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | 40 nC |
