- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.65 mOhms (1)
- 1.88 Ohms (1)
- 1.9 mOhms (1)
- 10.2 mOhms (1)
- 10.3 mOhms (2)
- 13.7 mOhms (1)
- 14 mOhms (1)
- 160 mOhms (1)
- 2.1 mOhms (1)
- 250 mOhms (1)
- 27 mOhms (1)
- 28 mOhms (1)
- 3.1 mOhms (1)
- 3.3 mOhms (1)
- 34 mOhms (1)
- 390 mOhms (1)
- 4 mOhms (1)
- 4.5 mOhms (1)
- 400 mOhms (1)
- 5.4 mOhms (1)
- 6 mOhms (2)
- 8.5 mOhms (2)
- 8.9 mOhms (1)
- 850 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,000
In-stock
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Toshiba | MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 5.4 mOhms | 1.4 V | 24 nC | Enhancement | ||||
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14,788
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | |||
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2,392
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 150 A | 850 uOhms | 1.4 V | 103 nC | Enhancement | ||||
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3,211
In-stock
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Toshiba | MOSFET N-CH Mosfet 40V 150A 8DSOP | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 0.65 mOhms | 1.4 V | 103 nC | Enhancement | |||
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2,000
In-stock
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Toshiba | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 2.5 V | 76 nC | Enhancement | |||
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18,176
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 390 mOhms | 850 mV | 1.1 nC | Enhancement | ||||
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2,089
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=132W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 2.1 mOhms | 1.4 V | 74 nC | Enhancement | |||
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690
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1.4 V | 41 nC | Enhancement | |||
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4,840
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 1.8 A | 400 mOhms | 500 mV | 1.1 nC | Enhancement | ||||
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19,160
In-stock
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Toshiba | MOSFET N-ch 40V 50A DP | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 10.2 mOhms | |||||||||
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145
In-stock
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Toshiba | MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz | 3.6 V | SMD/SMT | uDFN-6 | Reel | 1 Channel | Si | N-Channel, SBD | 40 V | 2 A | 160 mOhms | 1 nC | |||||||
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1,999
In-stock
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Toshiba | MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 3.3 mOhms | 2.5 V | 39 nC | Enhancement | |||
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9,600
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 92 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | |||
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3,000
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.9 mOhms | 1.4 V | 7.5 nC | Enhancement | ||||
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45,000
In-stock
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Toshiba | MOSFET N-Ch MOS 20A 40V 27W 985pF 0.034 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 20 A | 34 mOhms | |||||||||
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10,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V | 1.8 V | SMD/SMT | CST3B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 250 mOhms | 1.2 V | 1.1 nC | Enhancement | |||
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20,000
In-stock
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Toshiba | MOSFET 40V N0Ch PWR FET 40A 47W 1920pF | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 10.3 mOhms | 2.3 V | 29 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch MOS 80A 40V 100W 4340pF 0.0031 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.1 mOhms | |||||||||
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VIEW | Toshiba | MOSFET UMOSVIII 40V 17.8m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 13.7 mOhms | 2.5 V | 10 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET N-Ch MOS 35A 40V 58W 1370pF 0.0103 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 35 A | 10.3 mOhms | |||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.028 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 28 mOhms | |||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 20A 40V 38W 820pF 0.014 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 20 A | 14 mOhms | |||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 65A 40V 88W 2800pF 0.0045 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 4.5 mOhms | |||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 4A 550V 80W 490pF 1.88 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 4 A | 1.88 Ohms | |||||||||
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VIEW | Toshiba | MOSFET N-ch 40V 32A SOP-Adv | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 32 A | 8.5 mOhms | |||||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 40V 7.5A Rdson=0.027Ohm | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7.5 A | 27 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-ch 40V 32A SOP-Adv | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 32 A | 8.5 mOhms |
