- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
5,935
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET 2-in-1 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 170 mA, 170 mA | 8.1 Ohms, 8.1 Ohms | 1.1 V, 1.1 V | 270 pC, 270 pC | Enhancement | |||
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GET PRICE |
4,012
In-stock
|
Toshiba | MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 400 mA | 4 Ohms | 1.8 V, - 1.8 V | ||||||||
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GET PRICE |
57,260
In-stock
|
Toshiba | MOSFET Small-signal MOSFET | 10 V, 10 V | SMD/SMT | SOT-363-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 500 mA, 500 mA | 460 mOhms, 460 mOhms | 350 mV, 350 mV | 1.23 nC, 1.23 nC | Enhancement | ||||
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GET PRICE |
5,584
In-stock
|
Toshiba | MOSFET SM Sig N-CH MOS 0.1A 30V -20 VGSS | 20 V | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 3.6 Ohms | ||||||||
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GET PRICE |
5,389
In-stock
|
Toshiba | MOSFET Small-signal MOSFET 2in1 ESD Protected | 20 V, 20 V | SMD/SMT | SOT-363-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.05 Ohms, 1.05 Ohms | 1.1 V, 1.1 V | 390 pC, 390 pC | Enhancement | ||||
|
GET PRICE |
3,000
In-stock
|
Toshiba | MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 180 mA | 11 Ohms | 1 V, - 1 V | ||||||||
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VIEW | Toshiba | MOSFET SS FET 2 N-Ch 0.1A 30V 5.4 Ohm | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | ||||||||||||||
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VIEW | Toshiba | MOSFET SMOS | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 2.5 V | Enhancement | |||||
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VIEW | Toshiba | MOSFET 60V VDSS 20V VGSS 200mA ID 150mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 3.1 V | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch Sm Sig FET 0.2A 60V 2-in-1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V |