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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQM120N06-3m5L_GE3
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1,062
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Vishay Semiconductors MOSFET 60 V 120A 375 W AEC-Q101 Qualified +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 120 A 0.0028 Ohms 1.5 V 330 nC Enhancement TrenchFET
SQJ422EP-T1_GE3
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RFQ
1,775
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Vishay Semiconductors MOSFET -40V 75A 83W AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-SO-8L-4 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 75 A 0.0028 Ohms 1.5 V 100 nC Enhancement TrenchFET
SQP120N06-3m5L_GE3
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Vishay Semiconductors MOSFET 60V 119A 175W AEC-Q101 Qualified +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 120 A 0.0028 Ohms 1.5 V 330 nC Enhancement TrenchFET
SQD100N03-3M4_GE3
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Vishay Semiconductors MOSFET 30V 100A 136W N-Channel MOSFET +/- 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 100 A 0.0028 Ohms 2.5 V 124 nC Enhancement TrenchFET
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