- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,992
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 55 mOhms | 11 nC | Enhancement | ||||
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3,980
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.5mOhms 9.3nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 34 A | 8.5 mOhms | 9.3 nC | StrongIRFET | ||||||
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1,503
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 16.4 mOhms | 2 V | 13 nC | Enhancement |
