- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,581
In-stock
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IR / Infineon | MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.5 mOhms | 30 nC | |||||||
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3,130
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | ||||
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678
In-stock
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IR / Infineon | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | |||||||
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294
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
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181
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 16nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 79 A | 4.5 mOhms | 16 nC | |||||||
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2,844
In-stock
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IR / Infineon | MOSFET MOSFT 30V 140A 4.5mOhm 38nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 38 nC | Enhancement | ||||
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1
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 1.4 V to 2.3 V | 38 nC | Enhancement |
