- Mounting Style :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,221
In-stock
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IR / Infineon | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 3 V | 10 nC | Enhancement | |||
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2,506
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 5.7mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | |||||||
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426
In-stock
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IR / Infineon | MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | |||||||
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173
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 58 A | 11.9 mOhms | 1.35 V to 2.35 V | 10 nC | Enhancement |
