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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,485
In-stock
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IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
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2,684
In-stock
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IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | |||
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3,130
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
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678
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IR / Infineon | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | ||||||||
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294
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | ||||||
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380
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 180 nC | StrongIRFET |
