- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,340
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | ||||
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4,223
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 28 nC | |||||||
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GET PRICE |
4,992
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 55 mOhms | 11 nC | Enhancement | ||||
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5,816
In-stock
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IR / Infineon | MOSFET MOSFT 200V 5A 600mOhm 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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5,332
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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2,800
In-stock
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IR / Infineon | MOSFET MOSFT 200V 14A 235mOhm 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 165 mOhms | 25 nC | Enhancement | ||||||
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6,773
In-stock
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IR / Infineon | MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 600 mA | 2.2 Ohms | 3.9 nC | Enhancement | |||||
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1,824
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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3,000
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 200V 9.4A 380mOhm 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||||
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1,006
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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826
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 2 V to 4 V | 44.7 nC | Enhancement | ||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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323
In-stock
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IR / Infineon | MOSFET MOSFT 200V 31A 82mOhm 70nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | ||||||
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200
In-stock
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IR / Infineon | MOSFET MOSFT 200V 76A 23.2mOhm 100nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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54
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 25 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET 200V 1 x N-CH HEXFET for Digital Audio | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 85 mOhms | 26 nC | Enhancement | Directfet | ||||
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1,503
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 5 V | 28 nC | ||||||
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224
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 300 mOhms | 23.3 nC | Enhancement | |||||
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343
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 57 nC | Enhancement | |||||
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131
In-stock
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IR / Infineon | MOSFET MOSFT 200V 65A 26mOhm 70nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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419
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH DIGITAL AUDIO HEXFET SWITCH | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 85 mOhms | 18 nC | ||||||||
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587
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 300 mOhms | 2 V to 4 V | 23.3 nC | Enhancement | ||||
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300
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 25 nC | Enhancement | |||||
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5
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 78 mOhms | 25 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 78 mOhms | 25 nC |
