- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,687
In-stock
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IR / Infineon | MOSFET MOSFT 30V 16A 6.8mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | |||||||
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3,133
In-stock
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IR / Infineon | MOSFET MOSFT 20V 16A 6.5mOhm 41nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 16 A | 11 mOhms | 2 V | 41 nC | ||||
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1,992
In-stock
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IR / Infineon | MOSFET Automotive FET 55V 7A 58mOhm | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 16 A | 58 mOhms | 6.6 nC | ||||||||
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632
In-stock
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IR / Infineon | MOSFET Automotive FET 55V 7A 58mOhm | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 16 A | 46 mOhms | 1 V | 9.9 nC | Enhancement | |||
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4,800
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC | 20 V | SMD/SMT | DirectFET-ST | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 16 A | 9.7 mOhms | 2.2 V | 11 nC | ||||
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1,104
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | Enhancement |
