- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,566
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | Enhancement | StrongIRFET | |||
|
|
145
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 87 A | 7.8 mOhms | 36 nC | Enhancement | ||||||
|
|
VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | ||||||
|
|
VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement |
