- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,152
In-stock
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IR / Infineon | MOSFET MOSFT 250V 19A 46mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 19 A | 46 mOhms | 73 nC | Enhancement | |||||
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3,377
In-stock
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IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | ||||
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3,925
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 15.5 mOhms | 11 nC | ||||||||
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490
In-stock
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IR / Infineon | MOSFET MOSFT 30V 19A 4.5mOhm 29nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 29 nC | ||||||||
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482
In-stock
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IR / Infineon | MOSFET MOSFET_(120V,300V)_47 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 19 A | 145 mOhms | 3 V | 57 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 200V 1 x N-CH HEXFET for Digital Audio | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 85 mOhms | 26 nC | Enhancement | Directfet | ||||
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215
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 29nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 1.35 V to 2.25 V | 29 nC | Enhancement |
