- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,700
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | ||||
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2,555
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
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785
In-stock
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IR / Infineon | MOSFET MOSFT 55V 3.7A 45mOhm 23nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 3.7 A | 45 mOhms | 23 nC | ||||||||
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157
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET MOSFT 55V 25A 45mOhm 22.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 45 mOhms | 22.7 nC | ||||||||
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VIEW | IR / Infineon | MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 45 mOhms | - 1 V | 59 nC | |||||||
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312
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 23nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 3.7 A | 45 mOhms | 23 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 3.1 A | 45 mOhms | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 45 mOhms | Enhancement |