- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,591
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 86 A | 5.5 mOhms | 36 nC | Enhancement | Directfet | ||||
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2,191
In-stock
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IR / Infineon | MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 89 nC | |||||||
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490
In-stock
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IR / Infineon | MOSFET MOSFT 30V 19A 4.5mOhm 29nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 29 nC | ||||||||
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215
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 29nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 1.35 V to 2.25 V | 29 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement |
