- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
8,000
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET P 75A 120nC D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 120 nC | ||||
|
|
2,258
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 38.7 nC | ||||
|
|
5,500
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | - 4 V | 12.7 nC | ||||
|
|
1,083
In-stock
|
IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | |||
|
|
998
In-stock
|
IR / Infineon | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 58 nC | Enhancement | |||
|
|
3,013
In-stock
|
IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 63 nC | ||||
|
|
1,830
In-stock
|
IR / Infineon | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | Enhancement | |||
|
|
VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 63 nC |
