- Rds On - Drain-Source Resistance :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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800
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 93.3 nC | Enhancement | |||||
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770
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | 93.3 nC | Enhancement | |||||
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800
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 93.3 nC | Enhancement | ||||||
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336
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 93.3 nC | Enhancement | |||||
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6
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 1 V to 3 V | 93.3 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 93.3 nC | Enhancement |