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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,686
In-stock
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IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | |||||||
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GET PRICE |
10,780
In-stock
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IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | ||||||
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1,360
In-stock
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IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | |||||||
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726
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 7 mOhm, 56 nC Qg, IPAK | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 56 V | 7 A | 7 mOhms | 56 nC | Enhancement | ||||
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542
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 3.9 mOhms | 1 V | 56 nC | Enhancement | |||
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559
In-stock
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IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 9 mOhms | 56 nC |
