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18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,000
In-stock
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IR / Infineon | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 35 mOhms | 40 nC | Enhancement | |||||
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3,738
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 5.2 mOhms | 2.5 V | 40 nC | Enhancement | ||||
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2,768
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 2.1 mOhms | 1.9 V | 40 nC | Directfet | ||||
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1,771
In-stock
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IR / Infineon | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 58 A | 8 mOhms | 2.1 V | 40 nC | Enhancement | StrongIRFET | |||
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1,317
In-stock
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IR / Infineon | MOSFET MOSFT 30V 21A 3.6mOhm 40nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | ||||||||
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312
In-stock
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IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | ||||||||
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760
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement | |||||
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540
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | ||||||
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4,086
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 71 A | 9.6 mOhms | 4 V | 40 nC | Enhancement | ||||
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2,367
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 20 mOhms | 40 nC | Enhancement | |||||
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1,824
In-stock
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IR / Infineon | MOSFET 60V SINGLE N-CH 6.7mOhms 40nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 89 A | 6.7 mOhms | 4 V | 40 nC | Enhancement | ||||
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566
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 1 V to 3 V | 40 nC | Enhancement | ||||
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159
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 116 A | 10 mOhms | 40 nC | Enhancement | |||||
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102
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement | |||||
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124
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.6mOhms 40nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 40 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 40 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 40 nC | Enhancement |
