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- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,181
In-stock
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IR / Infineon | MOSFET MOSFT 40V 11A 13mOhm 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 13 mOhms | 2 V | 29 nC | ||||||
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2,258
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 11 A | 15 mOhms | 0.8 V to 2 V | 29 nC | Enhancement | |||||
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4,286
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 29 nC | |||||||||
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20,000
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC | Enhancement | |||||
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3,000
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 29 nC | Enhancement | |||||||
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2,258
In-stock
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IR / Infineon | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 11.1 mOhms | 4 V | 29 nC | ||||||
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490
In-stock
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IR / Infineon | MOSFET MOSFT 30V 19A 4.5mOhm 29nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 29 nC | |||||||||
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4,800
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC | 16 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1.7 mOhms | 29 nC | Directfet | ||||||||
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1,517
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 6mOhm HEXFET 110A ID | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 3 V | 29 nC | ||||||
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353
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 29 nC | Enhancement | ||||||
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215
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 29nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 1.35 V to 2.25 V | 29 nC | Enhancement | |||||
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41
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC | 16 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1.7 mOhms | 29 nC | |||||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC |