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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,178
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 100 mOhms | 37 nC | Enhancement | ||||
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7,990
In-stock
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IR / Infineon | MOSFET MOSFT 100V 5.4A 39mOhm 37nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | |||||||
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2,489
In-stock
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IR / Infineon | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 34 mOhms | 4 V | 37 nC | ||||
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2,940
In-stock
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IR / Infineon | MOSFET MOSFT 30V 15A 7.5mOhm 37nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 9 mOhms | 37 nC | |||||||
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3,800
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.5mOhms 37nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 15 A | 9 mOhms | 2 V | 37 nC | ||||
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6,000
In-stock
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IR / Infineon | MOSFET MOSFT 80V 38A 29mOhm 37nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 80 V | 38 A | 29 mOhms | 37 nC |
