- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,583
In-stock
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IR / Infineon | MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | |||||||
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1,053
In-stock
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IR / Infineon | MOSFET MOSFT 100V 17A 100mOhm 22.7nC LogLv | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 150 mOhms | 22.7 nC | |||||||
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764
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 100mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 150 mOhms | 1 V to 2 V | 22.7 nC | Enhancement | |||
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818
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 40mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 26 A | 40 mOhms | 22.7 nC | Enhancement | |||||
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GET PRICE |
8,000
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET MOSFT 55V 25A 45mOhm 22.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 45 mOhms | 22.7 nC | |||||||
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136
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 100mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 150 mOhms | 2 V | 22.7 nC | Enhancement |
