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- Rds On - Drain-Source Resistance :
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,973
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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2,302
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
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734
In-stock
|
IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | |||
|
|
440
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | ||||
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450
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 190 nC | Enhancement | ||||||
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809
In-stock
|
IR / Infineon | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2 mOhms | 3.7 V | 411 nC | Enhancement | StrongIRFET | |||||
|
|
850
In-stock
|
IR / Infineon | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 210 nC | Enhancement | StrongIRFET | |||||
|
|
800
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
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|
790
In-stock
|
IR / Infineon | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2.4 mOhms | 3.7 V | 279 nC | Enhancement | StrongIRFET | |||||
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392
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 127A 6mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||||
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200
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 76A 23.2mOhm 100nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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312
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | ||||||||
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559
In-stock
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IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | ||||||||
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250
In-stock
|
IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC | ||||||||
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280
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | |||
|
|
384
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | ||||||
|
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482
In-stock
|
IR / Infineon | MOSFET MOSFET_(120V,300V)_47 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 19 A | 145 mOhms | 3 V | 57 nC | Enhancement | ||||
|
|
540
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 40 nC | Enhancement | ||||||
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275
In-stock
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IR / Infineon | MOSFET 40V 295A 1.8mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.8 mOhms | 150 nC | ||||||||
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174
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||
|
|
590
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | ||||
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219
In-stock
|
IR / Infineon | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | ||||
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54
In-stock
|
IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 170 nC | Enhancement | ||||||
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100
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | ||||
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|
25
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
|
|
3,200
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | ||||
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|
267
In-stock
|
IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 3 V | 216 nC | Enhancement | StrongIRFET | |||
|
|
270
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.2 mOhms 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | |||
|
|
3,077
In-stock
|
IR / Infineon | MOSFET MOSFT 20V 50A 11mOhm 7nC Log Lvl | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 50 A | 15.5 mOhms | 7 nC |
