- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,234
In-stock
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IR / Infineon | MOSFET MOSFT PCh -150V -2.2A 240mOhm 33nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | 33 nC | ||||||||
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5,791
In-stock
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IR / Infineon | MOSFET MOSFT 40V 18A 5mOhm 33nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | ||||||||
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2,464
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | - 5 V | 33 nC | Enhancement | ||||
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1,328
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | Enhancement | |||||
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736
In-stock
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IR / Infineon | MOSFET HEXFET 100V N CHANNEL | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 105 A | 6 mOhms | 3.6 V | 33 nC | Enhancement | StrongIRFET |
