- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
6,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 30V PowerPAK 1212-8 | + 20 V, - 16 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 0.0073 Ohms | 1 V | 31 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 30V PowerPAK SO-8 | + 20 V, - 16 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45.5 A | 0.0054 Ohms | 1.1 V | 25.5 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 30V PowerPAK SO-8 | + 20 V, - 16 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 0.0073 Ohms | 1 V | 31 nC | Enhancement | ||||
|
|
VIEW | Siliconix / Vishay | MOSFET N-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 0.0035 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET |