- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 0.0011 Ohms (1)
- 0.0016 Ohms (1)
- 0.003 Ohms (2)
- 0.0035 Ohms (1)
- 0.0036 Ohms (1)
- 0.0037 Ohms (2)
- 0.00378 Ohms (1)
- 0.0065 Ohms (1)
- 0.0071 Ohms (2)
- 0.0072 Ohms (1)
- 0.009 Ohms (1)
- 0.012 Ohms (1)
- 0.014 Ohms (1)
- 0.016 Ohms (2)
- 0.0176 Ohms (1)
- 0.018 Ohms (1)
- 0.022 Ohms (1)
- 0.026 Ohms (3)
- 0.0272 Ohms (1)
- 0.032 Ohms (2)
- 0.125 Ohms (1)
- 1.21 mOhms (1)
- 2.6 mOhms (1)
- 2.8 mOhms (1)
- 22 mOhms (1)
- 27 mOhms (1)
- 30 mOhms (1)
- 4.6 mOhms (1)
- 5.8 mOhms (1)
- 6.8 mOhms (1)
- 900 uOhms (1)
- Qg - Gate Charge :
-
- 100 nC (1)
- 106 nC (1)
- 110 nC (2)
- 12 nC (1)
- 12.4 nC (1)
- 12.7 nC (1)
- 13 nC (1)
- 130 nC (2)
- 14 nC (1)
- 150 nC (1)
- 18 nC (1)
- 20 nC (2)
- 200 nC (1)
- 220 nC (1)
- 230 nC (2)
- 24 nC (1)
- 25 nC (1)
- 27 nC (1)
- 290 nC (1)
- 30 nC (2)
- 35 nC (1)
- 40 nC (1)
- 41 nC (1)
- 44 nC (1)
- 5.3 nC (1)
- 51 nC (1)
- 60 nC (1)
- 65 nC (1)
- 70 nC (1)
- 72 nC (1)
- 75 nC (1)
- 80 nC (1)
- 85 nC (1)
38 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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|
2,995
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V PowerPAK 1212-8W | +/- 20 V | SMD/SMT | PowerPAK-1212-8W | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 16 A | 0.0065 Ohms | 1.5 V | 35 nC | Enhancement | |||||
|
2,990
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 23 A | 0.0272 Ohms | 1.5 V | 30 nC | Enhancement | |||||
|
2,965
In-stock
|
Siliconix / Vishay | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 14 nC | Enhancement | TrenchFET | ||||
|
128,001
In-stock
|
Siliconix / Vishay | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 0.125 Ohms | 1.5 V | 5.3 nC | Enhancement | TrenchFET | ||||
|
4,132
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16 A | 0.022 Ohms | 1.5 V | 24 nC | Enhancement | TrenchFET | ||||
|
1,989
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 135 A | 2.8 mOhms | 1.5 V | 150 nC | Enhancement | |||||
|
2,950
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.018 Ohms | 1.5 V | 41 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.6 mOhms | 1.5 V | 80 nC | Enhancement | |||||
|
1,644
In-stock
|
Siliconix / Vishay | MOSFET 100V 50A 45watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 0.0071 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | ||||
|
2,105
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 0.014 Ohms | 1.5 V | 44 nC | Enhancement | TrenchFET | ||||
|
2,929
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 12.4 nC | Enhancement | TrenchFET | ||||
|
795
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 4.6 mOhms | 1.5 V | 100 nC | Enhancement | |||||
|
1,190
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 29 A | 0.0036 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | |||||
|
18,400
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 0.012 Ohms | 1.5 V | 40 nC | Enhancement | |||||
|
800
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.21 mOhms | 1.5 V | 230 nC | Enhancement | |||||
|
2,969
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 13 nC | Enhancement | TrenchFET | ||||
|
900
In-stock
|
Siliconix / Vishay | MOSFET 100V 32A 27watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.009 Ohms | 1.5 V | 51 nC | Enhancement | TrenchFET | ||||
|
2,495
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 30 mOhms | 1.5 V | 20 nC | Enhancement | |||||
|
435
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK1212-8W | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 0.016 Ohms | 1.5 V | 25 nC | Enhancement | |||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 12 nC | Enhancement | |||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 27 mOhms | 1.5 V | 20 nC | Enhancement | |||||
|
GET PRICE |
16,730
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 1.5 V | 130 nC | Enhancement | TrenchFET | |||
|
1,900
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 900 uOhms | 1.5 V | 220 nC | Enhancement | |||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.8 mOhms | 1.5 V | 75 nC | Enhancement | |||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 0.0037 Ohms | 1.5 V | 85 nC | Enhancement | |||||
|
2,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 55V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 0.016 Ohms | 1.5 V | 18 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 60 A | 6.8 mOhms | 1.5 V | 60 nC | Enhancement | |||||
|
VIEW | Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 50 A | 0.0071 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||||
|
VIEW | Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 12.7 nC | Enhancement |