Build a global manufacturer and supplier trusted trading platform.
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQD50N04-4M5L_GE3
GET PRICE
RFQ
16,730
In-stock
Siliconix / Vishay MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified +/- 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 50 A 0.003 Ohms 1.5 V 130 nC Enhancement TrenchFET
SQJ423EP-T1_GE3
1+
$1.030
10+
$0.824
100+
$0.633
500+
$0.559
3000+
$0.412
RFQ
3,000
In-stock
Siliconix / Vishay MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-SO-8L-4 - 55 C + 175 C Reel 1 Channel Si P-Channel - 40 V - 55 A 11 mOhms - 2.5 V 130 nC Enhancement  
SQD100N04-3m6L_GE3
1+
$1.650
10+
$1.320
100+
$1.010
500+
$0.898
2000+
$0.659
VIEW
RFQ
Siliconix / Vishay MOSFET N-Channel 40V AEC-Q101 Qualified +/- 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 0.003 Ohms 1.5 V 130 nC Enhancement TrenchFET
SQM35N30-97_GE3
800+
$1.880
1600+
$1.590
3200+
$1.510
5600+
$1.380
VIEW
RFQ
Siliconix / Vishay MOSFET N-Chnl 300-V (D-S) AEC-Q101 Qualified +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C   1 Channel Si N-Channel 300 V 35 A 0.078 Ohms 2.5 V 130 nC Enhancement TrenchFET
Page 1 / 1