- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 0.84 A (1)
- - 110 A (1)
- - 120 A (1)
- - 15 A (1)
- - 16 A (2)
- - 18 A (1)
- - 2.2 A (1)
- - 2.5 A (1)
- - 22 A (1)
- - 3.2 A (1)
- - 3.9 A (1)
- - 30 A (1)
- - 32 A (1)
- - 40 A (2)
- - 48 A (1)
- - 5 A (1)
- - 50 A (6)
- - 6.8 A (1)
- - 7.5 A (1)
- 100 A (1)
- 12 A (1)
- 120 A (4)
- 16 A (1)
- 2.3 A (1)
- 200 A (1)
- 25 A (1)
- 29 A (1)
- 30 A (2)
- 32 A (3)
- 35 A (1)
- 42 A (1)
- 50 A (5)
- 56 A (1)
- 60 A (1)
- 7 A (2)
- 8 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.0015 Ohms (1)
- 0.003 Ohms (5)
- 0.0034 Ohms (1)
- 0.0035 Ohms (1)
- 0.0036 Ohms (1)
- 0.0046 Ohms (1)
- 0.005 Ohms (3)
- 0.007 Ohms (2)
- 0.0071 Ohms (3)
- 0.0078 Ohms (1)
- 0.0079 Ohms (2)
- 0.009 Ohms (2)
- 0.012 Ohms (1)
- 0.013 Ohms (2)
- 0.014 Ohms (2)
- 0.016 Ohms (1)
- 0.0176 Ohms (1)
- 0.018 Ohms (2)
- 0.02 Ohms (1)
- 0.022 Ohms (2)
- 0.023 Ohms (1)
- 0.024 Ohms (1)
- 0.026 Ohms (2)
- 0.028 Ohms (1)
- 0.032 Ohms (1)
- 0.033 Ohms (1)
- 0.035 Ohms (2)
- 0.041 Ohms (1)
- 0.042 Ohms (1)
- 0.078 Ohms (1)
- 0.08 Ohms (2)
- 0.125 Ohms (1)
- 0.13 Ohms (1)
- 0.241 Ohms (1)
- 0.29 Ohms (1)
- 1.3 Ohms (1)
- 36 S (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 105 nC (1)
- 110 nC (2)
- 113 nC (1)
- 12.4 nC (1)
- 13 nC (2)
- 130 nC (3)
- 134 nC (1)
- 135 nC (1)
- 137 nC (2)
- 14 nC (1)
- 145 nC (2)
- 146 nC (1)
- 155 nC (2)
- 164 nC (2)
- 18 nC (2)
- 180 nC (2)
- 190 nC (2)
- 200 nC (1)
- 21 nC (1)
- 23.5 nC (1)
- 24 nC (1)
- 26 nC (1)
- 27 nC (1)
- 29 nC (1)
- 310 nC (1)
- 330 nC (1)
- 34 nC (1)
- 41 nC (1)
- 44 nC (1)
- 5.3 nC (1)
- 5.5 nC (1)
- 50 nC (2)
- 51 nC (2)
- 57 nC (1)
- 58 nC (1)
- 6.8 nC (1)
- 70 nC (1)
- 72 nC (1)
- 75 nC (1)
- 8 nC (1)
- 85 nC (1)
- Applied Filters :
56 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,965
In-stock
|
Siliconix / Vishay | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 14 nC | Enhancement | TrenchFET | |||
|
|
128,001
In-stock
|
Siliconix / Vishay | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 0.125 Ohms | 1.5 V | 5.3 nC | Enhancement | TrenchFET | |||
|
|
12,192
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 0.08 Ohms | - 1.5 V | 8 nC | Enhancement | TrenchFET | |||
|
|
1,660
In-stock
|
Siliconix / Vishay | MOSFET 80V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 0.02 Ohms | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
|
4,132
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16 A | 0.022 Ohms | 1.5 V | 24 nC | Enhancement | TrenchFET | |||
|
|
17,310
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 2.2 A | 0.241 Ohms | - 2.5 V | 18 nC | Enhancement | TrenchFET | |||
|
|
3,742
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 32 A | 0.005 Ohms | - 1.5 V | 164 nC | Enhancement | TrenchFET | |||
|
|
2,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 22 A | 0.007 Ohms | - 2.5 V | 113 nC | Enhancement | TrenchFET | |||
|
|
2,950
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.018 Ohms | 1.5 V | 41 nC | Enhancement | TrenchFET | |||
|
|
5,962
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 12 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 0.08 Ohms | - 1.5 V | 5.5 nC | Enhancement | TrenchFET | |||
|
|
1,644
In-stock
|
Siliconix / Vishay | MOSFET 100V 50A 45watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 0.0071 Ohms | 1.5 V | 70 nC | Enhancement | TrenchFET | |||
|
|
2,600
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 75V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 0.022 Ohms | 1.1 V | 34 nC | Enhancement | TrenchFET | |||
|
|
795
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 0.0034 Ohms | - 2.5 V | 330 nC | Enhancement | TrenchFET | |||
|
|
3,448
In-stock
|
Siliconix / Vishay | MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 0.84 A | 1.3 Ohms | - 3.5 V | 10 nC | Enhancement | TrenchFET | |||
|
|
2,105
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 0.014 Ohms | 1.5 V | 44 nC | Enhancement | TrenchFET | |||
|
|
770
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0015 Ohms | 2.5 V | 310 nC | Enhancement | TrenchFET | ||||
|
|
1,385
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 0.018 Ohms | - 2.5 V | 26 nC | Enhancement | TrenchFET | |||
|
|
525
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
|
|
2,929
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 12.4 nC | Enhancement | TrenchFET | |||
|
|
1,190
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 29 A | 0.0036 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
|
|
734
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 36 S | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
|
891
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | |||
|
|
2,805
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement | TrenchFET | |||
|
|
708
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 0.033 Ohms | - 2.5 V | 134 nC | Enhancement | TrenchFET | |||
|
|
542
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 200V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 60 A | 0.028 Ohms | 2.5 V | 135 nC | Enhancement | TrenchFET | ||||
|
|
2,500
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | |||
|
|
481
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | ||||
|
|
648
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 0.042 Ohms | - 1 V | 13 nC | Enhancement | TrenchFET | |||
|
|
2,969
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 13 nC | Enhancement | TrenchFET |
