MOSFET - Kaimeite

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14 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQP120N10-3m8_GE3	1+ $4.070 10+ $3.270 100+ $2.980 250+ $2.690		PDF RFQ	481 In-stock	Siliconix / Vishay	MOSFET N-Channel 100V AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	100 V	120 A	0.003 Ohms	2.5 V	190 nC	Enhancement	TrenchFET
	SQP60N06-15_GE3	1+ $2.960 10+ $2.380 100+ $1.900 500+ $1.670		PDF RFQ	355 In-stock	Siliconix / Vishay	MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	60 V	56 A	0.012 Ohms	2.5 V	50 nC	Enhancement	TrenchFET
	SIHP065N60E-GE3	1+ $6.290 10+ $5.660 25+ $5.160 100+ $4.650		PDF RFQ	2,900 In-stock	Siliconix / Vishay	MOSFET 650V Vds 250W Pd +/-30V Vds E Series	30 V	Through Hole	TO-220AB-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	40 A	57 mOhms	3 V	98 nC	Enhancement
	SUP70101EL-GE3		GET PRICE	PDF RFQ	5,000 In-stock	Siliconix / Vishay	MOSFET -100V Vds TrenchFET -/+20V Vgs TO-220AB	20 V	Through Hole	TO-220AB	- 55 C	+ 175 C	Tube	1 Channel		P-Channel	- 100 V	- 120 A	11.4 mOhms	- 2.5 V	125 nC
	SUP90220E-GE3	1+ $2.690 10+ $2.160 100+ $1.730 500+ $1.520		PDF RFQ	490 In-stock	Siliconix / Vishay	MOSFET N-Channel 200V TO-220	+/- 20 V	Through Hole	TO-220AB-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	200 V	64 A	0.018 Ohms	2 V	48 nC	Enhancement
	SQP100P06-9M3L_GE3	1+ $2.980 10+ $2.400 100+ $1.920 500+ $1.680	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220AB-3	- 55 C	+ 175 C	Tube	1 Channel	Si	P-Channel	- 60 V	- 100 A	0.0072 Ohms	- 2.5 V	300 nC	Enhancement
	SQP50N06-09L_GE3	1+ $2.160 10+ $1.740 100+ $1.390 500+ $1.210	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	60 V	50 A	0.0071 Ohms	1.5 V	72 nC	Enhancement	TrenchFET
	SQP120N06-06_GE3	1+ $2.980 10+ $2.400 100+ $1.920 500+ $1.680	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220AB-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	119 A	0.0045 Ohms	2.5 V	145 nC	Enhancement
	SQP120N10-09_GE3	1+ $2.980 10+ $2.400 100+ $1.920 500+ $1.680	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220AB-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	100 V	120 A	0.0079 Ohms	2.5 V	180 nC	Enhancement	TrenchFET
	SQP100N04-3m6_GE3	1+ $1.790 10+ $1.440 100+ $1.150 500+ $1.010	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	100 A	0.003 Ohms	2.5 V	135 nC	Enhancement
	SQP25N15-52_GE3	1+ $2.050 10+ $1.650 100+ $1.320 500+ $1.150	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N Ch 150Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	150 V	25 A	0.041 Ohms	2.5 V	60 nC	Enhancement
	SQV120N06-4m7L_GE3	500+ $1.680 1000+ $1.420 2500+ $1.350 5000+ $1.240	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-262-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	120 A	0.00378 Ohms	1.5 V	230 nC	Enhancement
	SQP90P06-07L_GE3	500+ $1.780 1000+ $1.510 2500+ $1.430 5000+ $1.320	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-220AB-3	- 55 C	+ 175 C	Tube	1 Channel	Si	P-Channel	- 60 V	- 120 A	0.0056 Ohms	- 2.5 V	270 nC	Enhancement
	SQV120N10-3M8_GE3	500+ $1.970 1000+ $1.670 2500+ $1.590 5000+ $1.460	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-262-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	100 V	120 A	0.003 Ohms	2.5 V	190 nC	Enhancement	TrenchFET

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